Contract 80GRC025P0002
Raytheon Company · National Aeronautics And Space Administration · September 26, 2025
Raytheon Company was awarded a federal contract by National Aeronautics And Space Administration on September 26, 2025 for $274,000 of work in semiconductor and related device manufacturing. Performance is in Tewksbury, MA. It was awarded under full and open competition. The contract has been modified 1 time since the base award It uses firm fixed-price contract pricing. The most recent modification was on March 6, 2026.
Contract details
- PIID
- 80GRC025P0002
- Award type
- Purchase Order
- Pricing
- Firm Fixed Price
- Set-aside
- No Set Aside Used.
- Competition
- Not Competed
- NAICS
- 334413 · Semiconductor And Related Device Manufacturing
- Product / service
- Semiconductor Devices And Associated Hardware
- Place of performance
- Tewksbury, MA
- First action
- September 26, 2025
- Latest action
- March 6, 2026
Description
REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES.
Modification timeline
-
March 6, 2026Mod P00001 · Other Administrative Action$273.8K
-
September 26, 2025Base award$273.8K
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Frequently asked questions
What is contract 80GRC025P0002?
Contract 80GRC025P0002 is a federal contract awarded to Raytheon Company by National Aeronautics And Space Administration on September 26, 2025 for $274,000 of work classified under SEMICONDUCTOR AND RELATED DEVICE MANUFACTURING. It has been modified 1 time since the base award.
Who won contract 80GRC025P0002?
Raytheon Company won contract 80GRC025P0002 from National Aeronautics And Space Administration.
How much is contract 80GRC025P0002 worth?
Contract 80GRC025P0002 has obligated $274,000 to date.